A high-performance silicon-on-insulator MEMS gyroscope operating at atmospheric pressure

This paper presents a new, high-performance silicon-on-insulator (SOI) MEMS gyroscope with decoupled oscillation modes. The gyroscope tructure allows it to achieve matched-resonance-frequencies, large drive-mode oscillation amplitude, high sense-mode quality factor, and low echanical cross-talk. The gyroscope is fabricated through the commercially available SOIMUMPS process of MEMSCAP Inc. The fabricated yroscope has minimum capacitive sense gaps of 2.6 m and a structural silicon thickness of 25 m, and it fits into a chip area smaller than mm× 3 mm. The fabricated gyroscope is hybrid connected to a CMOS capacitive interface ASIC chip, which is fabricated in a standard 0.6 m MOS process. The characterization of the hybrid-connected gyroscope demonstrates a low measured noise-equivalent rate of 90◦/h/Hz1/2 at tmospheric pressure, eliminating the need for a vacuum package for a number of applications. R2-non-linearity of the gyroscope is measured to e better than 0.02%. The gyroscope has a low quadrature signal of 70◦/s and a short-term bias stability of 1.5◦/s. The angular rate sensitivity of the yroscope is 100 V/(◦/s) at atmospheric pressure, which improves 24 times to 2.4 mV/(◦/s) at vacuum. The noise-equivalent rate of the gyroscope t 20 mTorr vacuum is measured to be 35◦/h/Hz1/2, which can be improved further by reducing the electromechanical noise. 2006 Elsevier B.V. All rights reserved.